high efficiency rectifier voltage range 50 to 1000 volts current 1.0 ampere rectron semiconductor technical specification features * low power loss, high efficiency * low leakage * low forward voltage * high current capability * high speed switching * high surge capability * high reliability mechanical data * case: molded plastic * epoxy: device has ul flammability classification 94v-o * lead: mil-std-202e method 208c guaranteed * mounting position: any * weight: 0.12 gram maximum ratings and electrical characteristics ratings at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20%. electrical characteristics (at t a = 25 o c unless otherwise noted) 1h1 thru 1h8 r-1 maximum ra tings (at t a = 25 o c unless otherwise noted) notes : 1. t est conditions: i f = 0.5a, i r = -1.0a, i rr = -0.25a 2. measured at 1 mh z and applied reverse voltage of 4.0 volts dimensions in inches and (millimeters) 2002-10 ratings maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current at t a = 25 o c peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (jedec method) typical junction capacitance (note 2) operating and storage temperature range symbol v rrm v dc i o i fsm c j t j , t stg v rms amps 1.0 25 15 -55 to + 150 amps pf 0 c units 50 35 50 100 70 100 volts volts volts 12 200 140 200 600 420 600 1000 700 1000 800 50 at rated dc blocking voltage t a = 25 o c characteristics maximum full load reverse current average, full cycle .375 (9.5mm) lead length at t l = 55 o c maximum reverse recovery time (note 1) v f symbol i r trr 5.0 100 75 uamps uamps nsec maximum dc reverse current maximum instantaneous forward voltage at 1.0a dc volts units 1.0 1.7 1.3 .787 ( 20.0 ) min. .106 ( 2.7 ) .126 ( 3.2 ) .787 ( 20.0 ) min. .102 ( 2.6 ) .091 ( 2.3 ) dia. .025 ( 0.65 ) .021 ( 0.55 ) dia. 400 280 400 300 210 300 1h1 1h2 1h3 1H4 1h5 1h6 1h8 1h7 800 560 1h1 1h2 1h3 1H4 1h5 1h6 1h7 1h8
rectron rating and characteristic curves ( 1h1 thru 1h8 ) fig. 6 - typical junction capacitance junction capacitance, (pf) reverse voltage, ( v ) 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 1h1~1h5 1h6~1h8 t j = 25 fig. 1 - test circuit diagram and reverse recovery time characteristic 50 noninductive 10 noninductive d.u.t 25 vdc (approx) ( - ) ( - ) ( + ) ( + ) 1 non- inductive oscilloscope (note 1) pulse generator (note 2) notes: 1 rise time = 7ns max. input impedance = 1 megohm. 22pf. 2. rise time = 10ns max. source impedance = 50 ohms. trr +0.5a 0 -0.25a -1.0a 1cm set time base for 10/20 ns/cm fig. 2 - typical forward current derating curve average forward curent, (a) ambient temperature ( ) 2.0 1.0 0 25 50 75 100 125 150 175 0 single phase half wave 60hz resistive or inductive load fig. 4 - typical instantaneous forward instantaneous forward current, (a) instantaneous forward voltage, (v) 10 1.0 .1 .01 .001 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 pulse width = 300us 1% duty cycle t j = 25 600/800/1000v 50/100/200v 300/400v fig. 3 - typical reverse characteristics instantaneous reverse current, (ua) percent of rated peak reverse voltage, (%) t j = 25 t j = 100 t j = 150 100 10 1.0 .1 .01 40 0 20 60 80 100 120 140 fig. 5 - maximum non-repetitive forward surge current peak forward surge current, (a) number of cycles at 60hz 35 30 25 20 15 10 5 0 1 2 5 10 20 50 100 8.3ms single half sine-wave ( jedec method ) characteristics
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